b-46 01/99 IFN5564, ifn5565, ifn5566 n-channel dual silicon junction field-effect transistor wide band differential amplifier commutators absolute maximum ratings at t a = 25?c. reverse gate source & reverse gate drain voltage C 40 v continuous forward gate current 50 ma continuous device power dissipation 650 mw power derating 3.3 mw/c toe71 package dimensions in inches (mm) pin configuration 1 source, 2 drain, 3 gate, 4 omitted, 5 source, 6 drain, 7 gate, 8 omitted at 25c free air temperature: IFN5564 ifn5565 ifn5566 process nj72 static electrical characteristics min max min max min max unit test conditions gate source breakdown voltage v (br)gss C 40 C 40 C 40 v i g = C 1 a, v ds = ? v gate leakage voltage i gss C 100 C 100 C 100 pa v gs = C 20 v, v ds = ? v C 200 C 200 C 200 na t a = 150c gate source cutoff voltage v gs(off) C 0.5 C 3 C 0.5 C 3 C 0.5 C 3 v v ds = 15 v, i d = 1 na gate source voltage v gs(f) 111vv ds = ? v, i g = 2 ma saturation current (pulsed) i dss 530530530mav ds = 15 v, v gs = ? v static drain source on resistance rds (on) 100 100 100 i d = 1 ma, v gs = ? v dynamic electrical characteristics common source g fs 7000 12500 7000 12500 7000 12500 hmo v dg = 15 v, i d = 2 ma f = 1 khz forward transconductance 7000 7000 7000 hmo f = 100 mhz common source output transconductance g os 45 45 45 hmo v ds = 15 v, i d = 2 ma f = 1 khz common source input capacitance c iss 12 12 12 pf v ds = 15 v, i d = 2 ma f = 1 mhz common source reverse transfer capacitance c rss 333pfv ds = 15 v, i d = 2 ma f = 1 mhz noise figure nf 1 1 1 db v ds = 15 v, i d = 2 ma f = 10 hz r g = 1 m equivalent short circuit input noise voltage e n 50 50 50 nv/ hz v dg = 15 v, i d = 2 ma f = 10 hz characteristics saturation drain current ratio (pulsed) i dss1 0.95 1 0.95 1 0.95 1 C v dg = 15 v, v gs = ? v i dss2 C differential gate source voltage |v gs(1) C v gs(2) | 5 10 20 mv v ds = 15 v, i d = 2 ma gate source voltage differential drift ? |v gs(f) C v gs(f) | 10 25 50 v/c v ds = 15 v, t a = 25c t b = 125c ? t 102550v/ci d = 2 ma t a = 55c t b = 25c transconductance ratio (pulsed) g fs(1) 0.95 1 0.9 1 0.9 1 C v ds = 15 v, i d = 2 ma g fs(2) C 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-46
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